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HAT3006R
Silicon N Channel / P Channel Power MOS FET High Speed Power Switching
REJ03G1197-0800 (Previous: ADE-208-480F) Rev.8.00 Sep 07, 2005
Features
* * * * Low on-resistance Capable of 4 V gate drive Low drive current High density mounting
Outline
RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 )
78 DD 56 DD
65 87 12 34
2 G
4 G
1, 3 2, 4 5, 6, 7, 8
Source Gate Drain
S1 Nch
S3 Pch
Rev.8.00 Sep 07, 2005 page 1 of 10
HAT3006R
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Symbol VDSS VGSS ID Note 1 ID (pulse) IDR Note 2 Pch Pch Tch
Note 3
Value Nch 30 20 6.5 52 6.5 2 3 150 Pch -30 20 -4.5 -36 -4.5
Unit V V A A A W W C C
Storage temperature Tstg -55 to +150 Notes: 1. PW 10 s, duty cycle 1% 2. 1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s 3. 2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s
Electrical Characteristics
N Channel (Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 4. Pulse test Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss td (on) tr td (off) tf VDF trr Min 30 20 -- -- 1.0 -- -- 5 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.03 0.05 8 560 380 170 30 270 40 65 0.9 45 Max -- -- 10 10 2.0 0.045 0.08 -- -- -- -- -- -- -- -- 1.4 -- Unit V V A A V S pF pF pF ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, ID = 1 mA Note 4 ID = 4 A, VGS = 10 V ID = 4 A, VGS = 4 V Note 4 ID = 4 A, VDS = 10 V VDS = 10 V VGS = 0 f = 1 MHz VGS = 4 V, ID = 4 A VDD 10 V
Note 4
IF = 6.5 A, VGS = 0 IF = 6.5 A, VGS = 0 diF/dt = 20 A/s
Note 4
Rev.8.00 Sep 07, 2005 page 2 of 10
HAT3006R P Channel (Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 5. Pulse test Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss td (on) tr td (off) tf VDF trr Min -30 20 -- -- -1.0 -- -- 4 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.07 0.11 6 660 440 140 24 165 35 70 -0.9 60 Max -- -- 10 -10 -2.5 0.09 0.18 -- -- -- -- -- -- -- -- -1.4 -- Unit V V A A V S pF pF pF ns ns ns ns V ns IF = -4.5 A, VGS = 0 IF = -4.5 A, VGS = 0 diF/dt = 20 A/s
Note 5
Test Conditions ID = -10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = -30 V, VGS = 0 VDS = -10 V, ID = -1 mA ID = -3 A, VGS = -10 V Note 5 ID = -3 A, VGS = -4 V ID = -3 A, VDS = -10 V VDS = -10 V VGS = 0 f = 1 MHz VGS = -4 V, ID = -3 A VDD -10 V
Note 5
Note 5
Rev.8.00 Sep 07, 2005 page 3 of 10
HAT3006R
Main Characteristics
N Channel
Maximum Safe Operation Area
100 30
10 s
Typical Output Characteristics
20 10 V 6V 4V 5V 12 4.5 V 3.5 V 8 3V VGS = 2.5 V 0 Pulse Test
10
ID (A)
10 3 1 0.3 0.1
DC
PW
1
m
Op
=
s
Drain Current
(P Operation in W No 1 te 5 this area is 0 limited by RDS (on) s)
Drain Current
er
10
at
ion
ms
ID (A)
0
s
16
Ta = 25C 0.03 1 shot Pulse 1 Drive Operation 0.01 1 3 0.1 0.3
4
10
30
100
0
2
4
6
8
10
Drain to Source Voltage VDS (V)
Note 5: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm)
Drain to Source Voltage
VDS (V)
Typical Transfer Characteristics
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source Saturation Voltage VDS (on) (V)
20 VDS = 10 V Pulse Test Tc = -25C 25C 75C
0.5
Pulse Test
ID (A)
16
0.4
12
0.3
Drain Current
8
0.2
ID = 5 A
4
0.1
2A 1A 0 2 4 6 8 10
0 0
1
2
3
4
5
0
Gate to Source Voltage
VGS (V)
Gate to Source Voltage
VGS (V)
0.5 Pulse Test 0.2 0.1 VGS = 4 V 0.05 10 V
Static Drain to Source on State Resistance RDS (on) ()
Static Drain to Source on State Resistance vs. Drain Current
Static Drain to Source on State Resistance vs. Temperature
0.10 Pulse Test 0.08 ID = 1 A, 2 A, 5 A VGS = 4 V
Drain to Source on State Resistance RDS (on) ()
0.06
0.04 1 A, 2 A, 5 A 10 V
0.02 0.01 0.005 0.2
0.02
0.5
1
2
5
10
20
0 -40
0
40
80
120
160
Drain Current
ID (A)
Case Temperature
Tc (C)
Rev.8.00 Sep 07, 2005 page 4 of 10
HAT3006R
Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance |yfs| (S) Reverse Recovery Time trr (ns)
20 10 5 75C 2 1 0.5 VDS = 10 V Pulse Test 0.2 0.2 0.5 1 2 5 10 20 25C Tc = -25C 500
Body-Drain Diode Reverse Recovery Time
200 100 50
20 10 5 0.2 di / dt = 20 A / s VGS = 0, Ta = 25C 0.5 1 2 5 10 20
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
VDS (V)
10000 3000 1000 Ciss 300 Coss 100 30 10 0 10 20 30 40 50 Crss VGS = 0 f = 1 MHz 50
Reverse Drain Current
IDR (A)
Dynamic Input Characteristics
ID = 6.5 A 40 VDD = 5 V 10 V 25 V VDS 20 VGS 16
Capacitance C (pF)
Drain to Source Voltage
30
12
8
10
0 0 8 16
VDD = 25 V 10 V 5V 24 32 40
4
0
Drain to Source Voltage VDS (V)
Gate Charge
Qg (nc)
Switching Characteristics
1000 500
Reverse Drain Current vs. Source to Drain Voltage
20
Reverse Drain Current IDR (A)
VGS = 4 V, VDD = 10 V PW = 3 s, duty 1 %
Pulse Test
Switching Time t (ns)
16
200 100 tf 50
tr
12
5V
td(off) td(on)
8
VGS = 0, -5 V
20 10 0.1
4
0 0.2 0.5 1 2 5 10 0 0.4 0.8 1.2 1.6 2.0
Drain Current
ID (A)
Source to Drain Voltage
VSD
(V)
Rev.8.00 Sep 07, 2005 page 5 of 10
Gate to Source Voltage
VGS (V)
20
HAT3006R P Channel
Maximum Safe Operation Area
-100 -30 10 s 100 s 1m PW s DC = Op 10 era ms tio n( Operation in PW No t this area is 1 e6 0s limited by RDS (on) ) -20
Typical Output Characteristics
-10 V -8 V -6 V -4.5 V -5 V Pulse Test -4 V
ID (A)
-10 -3 -1 -0.3 -0.1
ID (A) Drain Current
-16
-12 -3.5 V -8 -3 V -4 -2.5 V 0
VGS = -2 V
Drain Current
Ta = 25C -0.03 1 shot Pulse 1 Drive Operation -0.01 -1 -3 -0.1 -0.3
-10
-30
-100
0
-2
-4
-6
-8
-10
Drain to Source Voltage VDS (V)
Note 6: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm)
Drain to Source Voltage
VDS (V)
Typical Transfer Characteristics
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source Saturation Voltage VDS (on) (V)
-20 VDS = -10 V Pulse Test
-0.5
Pulse Test
ID (A)
-16
-0.4
-12
-0.3
Drain Current
-8 Tc = 75C -25C 25C 0 0 -1 -2 -3 -4 -5
-0.2
ID = -2 A -1 A -0.5 A 0 -2 -4 -6 -8 -10
-4
-0.1
0
Gate to Source Voltage
VGS (V)
Gate to Source Voltage
VGS (V)
1 Pulse Test 0.5
Static Drain to Source on State Resistance RDS (on) ()
Static Drain to Source on State Resistance vs. Drain Current
Static Drain to Source on State Resistance vs. Temperature
0.20 Pulse Test ID = -0.5 A, -1 A, -2 A VGS = -4 V
Drain to Source on State Resistance RDS (on) ()
0.16
0.2 VGS = -4 V 0.1 0.05 -10 V
0.12
0.08 -10 V -0.5 A, -1 A, -2 A
0.02 0.01 -0.2
0.04
-0.5
-1
-2
-5
-10
-20
0 -40
0
40
80
120
160
Drain Current
ID (A)
Case Temperature
Tc (C)
Rev.8.00 Sep 07, 2005 page 6 of 10
HAT3006R
Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance |yfs| (S) Reverse Recovery Time trr (ns)
20 10 5 Tc = -25C 25C 75C 1000 500
Body-Drain Diode Reverse Recovery Time
di / dt = 20 A / s VGS = 0, Ta = 25C
200 100 50
2 1 0.5
VDS = -10 V Pulse Test 0.2 -0.2 -0.5 -1 -2 -5 -10 -20
20 10 -0.1 -0.2
-0.5
-1
-2
-5
-10
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
VDS (V)
10000 3000 1000 300 100 30 10 0 -10 -20 -30 -40 -50 Ciss Coss Crss 0
Reverse Drain Current
IDR (A)
Dynamic Input Characteristics
VDD = -5 V -10 V -25 V
Capacitance C (pF)
-10
-4
Drain to Source Voltage
-20 VDS -30 VDD = -25 V -10 V -5 V ID = -4.5 A 0 8 16
VGS
-8
-12
-40
-16
VGS = 0 f = 1 MHz
-50
24
32
-20 40
Drain to Source Voltage VDS (V)
Gate Charge
Qg (nc)
Switching Characteristics
500 -20
Reverse Drain Current vs. Source to Drain Voltage
Reverse Drain Current IDR (A)
Pulse Test
Switching Time t (ns)
200 tr 100 50 tf td(off) td(on) VGS = -4 V, VDD = -10 V PW = 3 s, duty 1 % -0.5 -1 -2 -5 -10
-16
VGS = -5 V 0, 5 V
-12
-8
20 10
-4
5 -0.1 -0.2
0 0 -0.4 -0.8 -1.2 -1.6 -2.0
Drain Current
ID (A)
Source to Drain Voltage
VSD
(V)
Rev.8.00 Sep 07, 2005 page 7 of 10
Gate to Source Voltage
VGS (V)
0
HAT3006R Common
Power vs. Temperature Derating
4.0
Pch (W)
Test Condition: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s
3.0
Channel Dissipation
2 Dr
2.0
1 Dr ive
1.0
Op
ive
er
Op
at
er
ion
at ion
0
0
50
100
150
200
Ambient Temperature
Normalized Transient Thermal Impedance s (t)
10
Ta (C)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
1
D=1 0.5
0.1
0.2
0.1
0.05
0.02 0.01
ch - f (t) = s (t) * ch - f ch - f = 125C/W, Ta = 25C When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) PDM D= PW T 1m 10 m 100 m 1 10 100 1000 10000 PW T
0.01
0.001
1s h
p ot
uls
e
0.0001 10
100
Pulse Width PW (S) Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
Normalized Transient Thermal Impedance s (t)
10
1
D=1 0.5
0.1
0.2
0.1
0.05
0.02 0.01
ch - f (t) = s (t) * ch - f ch - f = 166C/W, Ta = 25C When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) PDM D= PW T 1m 10 m 100 m 1 10 100 1000 10000 PW T
0.01
0.001
1s t ho pu
lse
0.0001 10
100
Pulse Width PW (S)
Rev.8.00 Sep 07, 2005 page 8 of 10
HAT3006R
N channel Switching Time Test Circuit Switching Time Waveform
Vin Monitor D.U.T. RL
Vout Monitor Vin Vout 10% 10%
90%
10%
Vin 4V
50
VDD = 10 V td(on)
90% tr
90% td(off) tf
P channel Switching Time Test Circuit
Vin Vin Monitor D.U.T. RL 90% Vin -4 V 50 VDD = -10 V Vout td(on) 10% tr td(off) 10% tf 90% 90% Vout Monitor 10%
Switching Time Waveform
Rev.8.00 Sep 07, 2005 page 9 of 10
HAT3006R
Package Dimensions
JEITA Package Code P-SOP8-3.95 x 4.9-1.27 RENESAS Code PRSP0008DD-D Package Name FP-8DAV MASS[Typ.] 0.085g
*1 D
F
8
5
*2 E HE
bp
Index mark
1
Z e
4
*3 bp xM
c
Terminal cross section (Ni/Pd/Au plating)
NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET.
Reference Symbol
Dimension in Millimeters Min Nom 4.90 3.95 Max 5.3
L1
D E A2 A1 A 0.10
0.14
0.25 1.75
A
bp b1
0.34
0.40
0.46
A1
c
0.15
0.20
0.25
L
c1 0 HE 5.80 6.10 1.27 0.25 0.1 0.75 0.40 0.60 1.08 1.27 8 6.20
y
Detail F
e x y Z L L1
Ordering Information
Part Name Quantity Shipping Container HAT3006R-EL-E 2500 pcs Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.8.00 Sep 07, 2005 page 10 of 10
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
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Colophon .3.0

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